Volume 2 Issue 1 ( March 2015 )

In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO₂ substrates at the substrate temperature of 60°C, resulting in high OTFT performance with mobility greater than 0.56 cm²/(V·s) and I_on/I_off greater than of 10⁶. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.

Keywords: organic thin-film transistor, DNTT, surface treatment, self-assembled monolayer