Gettering behaviors of Fe into Si with p+ and n+ layers are investigated by deep-level transient spectroscopy. The samples with p+ layer show sheet resistance independence for gettering effect. In
contrast, the samples with n+ layer show sheet resistance dependence, indicating that sheet resistance less than 300Ω/□ is effective for the gettering. Furthermore, the sample with p+ and n+
layers shows that a n+ layer is more effective than a p+ layer. The gettering mechanisms of Fe in Siwith p+ and n+ layer are discussed in details.
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