Volume 11 Issue 3 ( September 2024)

Heterostructures composed of compound semiconductors hold significant promise for advancing near-infrared applications due to their unique electronic and optical properties. In this study, we present the design and simulation of a novel heterostructure tailored specifically for NIR functionality. The nanoscale heterostructure is designed using the compound semiconductors AlAs/In0.43Ga0.57As/GaAs0.55Sb0.45 and simulated for the applications of optical sources in near-infrared region. Through k.p method, we thoroughly investigate the electronic band structure, carrier transport properties, and optical response of the heterostructure. We also investigate how size of the quantum well layer affect the heterostructure performance, offering insightful information for future customization and optimization. The entire structure has been modeled at room temperature 300 K.

Keywords: Dispersion, Energy Wavefunctions, Heterostructure, Semiconductors, Quantum well