Volume 11 Issue 3 ( September 2024)

A W-shaped type-II AlAs/Al_0.3In_0.7As /GaAs_0.1Sb_0.9 lasing nanoscale heterostructure is designed for near infrared emission. The Luttinger kohn 6*6 model is used to compute wavefunctions, dispersion, matrix elements and then optical gain. The calculated optical gain for x polarization of light is found under variable well widths. For injected carrier concentration of 2.5×10¹² /cm² , gain of 12560/cm is attained at a wavelength of 1550 nm for 2 nm quantum well width. Such a structure can be regarded as new because of its high optical gain with low attenuation at 1550 nm, which makes it useful for optoelectronics.

Keywords: AlAs, AlInAs, GaAsSb, type-II QW heterostructure, dispersion, optical gain, near-infrared region.