Volume 12 Issue 1 ( March 2025)

Quantum nanostructures show promising applications in scaling electronic devices due to their exciting electronic and optical properties. In this work, a comparison of electron densities and confinement capabilities of nanowires made of three semiconductor materials (Ge, GaN, and ZnO) at low temperature (T = 10 K) is done through numerical-based modeling. Numerical calculation is done using the Poisson-Schrödinger (PS) and Thomas-Fermi (TF) approximation equations through the finite element method. Physical phenomena of one-dimensional structures, e.g., charge density waves (CDW) and Friedel oscillations (FO) in these nanowires, have also been studied. Numerical analysis of electron densities and confining potentials exhibits FO in all of these Ge, GaN, and ZnO nanowires. Results showed that lower energy states having smaller values in azimuthal quantum number (m = 0, 1, 2) contribute the most to carrier density profile. Finally, all three materials show Fermi-level-pinned energy that has great impact on the possibility of photogeneration gain.

Keywords: Nanowires; Friedel Oscillations; Electron Confinement; Carrier Density; Sub-band Energy