Vol.27 No.4(1) [2005]

Evaluation for Fe Gettering Ability of p+ and n+ Layersfor High-Efficiency Bifacial Si Solar Cell Fabrication

Takeshi TERAKAWA, Dong WANG and Hiroshi NAKASHIMA


Gettering behaviors of Fe into Si with p+ and n+ layers are investigated by deep-level transient spectroscopy. The samples with p+ layer show sheet resistance independence for gettering effect. In
contrast, the samples with n+ layer show sheet resistance dependence, indicating that sheet resistance less than 300Ω/□ is effective for the gettering. Furthermore, the sample with p+ and n+
layers shows that a n+ layer is more effective than a p+ layer. The gettering mechanisms of Fe in Siwith p+ and n+ layer are discussed in details.